Electron Irradiation Frozen Effect in Stiff/Soft Bilayer Films

Bilayer graphene. Electron-hole asymmetric integer and fractional quantum Hall effect in bilayer graphene.

The nature of fractional quantum Hall (FQH) states is determined by the interplay between the Coulomb interaction and the symmetries of the system. The distinct combination of spin, valley, and orbital degeneracies in bilayer graphene is predicted to produce an unusual and tunable sequence of FQH states. Here, we present local electronic compressibility measurements of the FQH effect in the low...

Assessment of pseudo-bilayer structures in the heterogate germanium electron-hole bilayer tunnel field-effect transistor

Effect of Electron Beam Irradiation on Viability of Sarcocystis spp. in Beef

Background: Sarcocystosis is one of the most distributed parasitic diseases over the world, caused by Sarcocystis spp. In this study, we assessed the effect of electron beam irradiation on the viability of Sarcocystis spp. in beef.  Methods: Experimental beef groups were irradiated by four different electron beam doses of 1, 2, 3, and 4 kGy, at intervals of 0 and 24 h after irradiation, then t...

Effect of electron-beam irradiation on graphene field effect devices

Isaac Childres, Luis A. Jauregui, Michael Foxe, Jifa Tian, Romaneh Jalilian, Igor Jovanovic, and Yong P. Chen Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA School of Nuclear Engineer...

Engineering the Electron-Hole Bilayer Tunneling Field- Effect Transistor

The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...